Ion Implantation - Development of Industry

Summary : Ion implanters directly inject dopant atoms into semiconductor wafers. A gas containing atoms or molecules of the desired dopant 'species' is first ionized in an ion source. The ions are then extracted from the source and are accelerated through an electric field. This accelerating potential typically ranges from a low value of about 20,000 volts to more than 200,000 volts. The dopÂant ions thereby gain sufficient energy to penetrate the silicon surface and become embedded several atomic layers ... See More

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Annexure :

Ion implantation offers three features that have outstanding advantages in semiconductor manufacturing. They are: a) precise control of impurity doping density, b) accurate control of the dopant depth distribution, and c) uniform deposition of dopants across the wafer surface.

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