Julius E. Lilienfeld - HoF

Summary : Julius E. Lilienfeld - HoF: For inventing and patenting the first FET semiconductor in 1926

Julius E. Lilienfeld — HoF: For inventing and patenting the first FET semiconductor in 1926

  • While the materials to make such devices were decades away from being ready, the Field Effect Transistor is the foundation of the modern semiconductor industry
    • Method and apparatus for controlling electric currents described the FET. U. S. Patent No. 1,745,175 (Filed in Canada on 22 Oct 1925 and later in the U.S. on 8 Oct 8, 1926 and issued 18 January1930)
    • Device for controlling electric current described a thin-film version of the FET. U. S. Patent No. 1,900,018 (Filed 28 Mar 1928 and issued 7 Mar 1933)
    • Bell Labs would discover the point-contact transistor in 1948, though William Shockley had first researched it in 1939 at Bell Labs, in search of a solid-state replacement for mechanical solenoids in order to lower the cost of replacement

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