Hi-k and Metal Gates

Summary : Mark Bohr: Intel Senior Fellow, Director of Process Architecture & Integration: Hi-k and Metal Gates
Annexure :

In one of the biggest advancements in fundamental transistor design, Intel Corporation revealed that it is using two dramatically new materials to build the insulating walls and switching gates of its 45 nanometer (nm) transistors. In this video, Mark Bohr, Intel Senior Fellow, delineates the importance of this technology and the scale of the accomplishment of Intel's researchers. Hundreds of millions of these microscopic transistors  or switches  will be inside the next generation Intel Core 2 Duo, Intel Core 2 Quad, and Xeon families of multi-core processors. The company also said it has five early-version products up and running -- the first of fifteen 45nm processor products planned from Intel. The transistor feat allows the company to continue delivering record-breaking PC, laptop and server processor speeds, while reducing the amount of electrical leakage from transistors that can hamper chip and PC design, size, power consumption, noise and costs. It also ensures Moore's Law, a high-tech industry axiom that transistor counts double about every two years, thrives well into the next decade. Find out more and see Mark Bohr, who headed the program, talk about it.

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